Manufacturer: Toshhibba Product Category: Bipolar Transistors - BJT RoHS: Details Technology: Si Mounting Style: Through Hole Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: - 140 V Collector- Base Voltage VCBO: - 140 V Emitter- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: 2 V Gain Bandwidth Product fT: 30 MHz Maximum Operating Temperature: + 150 C DC Current Gain hFE Max: 83 Brand: Toshhibba Continuous Collector Current: 10 A CNHTS: 8541210000 DC Collector/Base Gain hfe Min: 35 HTS Code: 8541210095 MXHTS: 85412101 Pd - Power Dissipation: 100 W Product Type: BJTs - Bipolar Transistors Factory Pack Quantity: 4000 Subcategory: Transistors TARIC: 8541210000 Unit Weight: 0.165788 oz